Datasheet > 晶体管 > 射频小信号双极晶体管> 2SC5006-T1

2SC5006-T1

更新时间： 2024-11-22 22:35:55

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号双极晶体管射频小信号双极晶体管光电二极管
页数	文件大小	规格书
10页	64K
描述
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

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中文翻译

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技术参数
数据手册

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2SC5006-T1 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.11	Is Samacsys：	N
JESD-30 代码：	R-PDSO-G3	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	Base Number Matches：	1

2SC5006-T1 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC5006

NPN SILICON EPITAXIAL TRANSISTOR

3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION

The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from

VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which

is an NEC proprietary fabrication technique.

FEATURES

PACKAGE DIMENSIONS

•

Low Voltage Use.

in millimeters

High fT

Low C^re

Low NF

: 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)

: 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)

: 1.2 dB TYP. (@ V^CE= 3 V, IC = 7 mA, f = 1 GHz)

1.6 ± 0.1

0.8 ± 0.1

High |S21e|²: 9 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)

Ultra Super Mini Mold Package.

ORDERING INFORMATION

PART

QUANTITY

NUMBER

PACKING STYLE

2SC5006

50 pcs./Unit

3 kpcs./Reel

Embossed tape 8 mm wide.

Pin3 (Collector) face to perforation side

of the tape.

2SC5006-T1

* PleasecontactwithresponsibleNECperson, ifyourequireevaluation

1. Emitter

2. Base

sample. Unit sample quantity shall be 50 pcs.

3. Collector

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

VCBO

VCEO

V^EBO

3.0

100

˚ C

Total Power Dissipation

Junction Temperature

Storage Temperature

125

T^j

150

Tstg

–60 to +150

Document No. P10385EJ2V0DS00 (2nd edition)

(Previous No. TD-2399)

Date Published July 1995 P

Printed in Japan

1993

12 3 4 5 6 7...10

中文翻译

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与2SC5006-T1相关器件

型号	品牌	获取价格	描述	数据表
2SC5006-T1-A	RENESAS	获取价格	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
2SC5006-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5006-T1-FB	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-3
2SC5006-T1FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5007	RENESAS	获取价格	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
2SC5007	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
2SC5007(NE68119)	ETC	获取价格	Discrete
2SC5007-FB	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-3
2SC5007-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC5007-T1	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

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