Datasheet > 2SC5006(NE85619)

2SC5006(NE85619)

更新时间： 2024-02-09 21:00:33

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
10页	54K
描述
Discrete

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2SC5006(NE85619) 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC5006

NPN SILICON EPITAXIAL TRANSISTOR

3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION

The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from

VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which

is an NEC proprietary fabrication technique.

FEATURES

PACKAGE DIMENSIONS

•

Low Voltage Use.

in millimeters

High fT

Low C^re

Low NF

: 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)

: 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)

: 1.2 dB TYP. (@ V^CE= 3 V, IC = 7 mA, f = 1 GHz)

1.6 ± 0.1

0.8 ± 0.1

High |S21e|²: 9 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)

Ultra Super Mini Mold Package.

ORDERING INFORMATION

PART

QUANTITY

NUMBER

PACKING STYLE

2SC5006

50 pcs./Unit

3 kpcs./Reel

Embossed tape 8 mm wide.

Pin3 (Collector) face to perforation side

of the tape.

2SC5006-T1

* PleasecontactwithresponsibleNECperson, ifyourequireevaluation

1. Emitter

2. Base

sample. Unit sample quantity shall be 50 pcs.

3. Collector

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

VCBO

VCEO

V^EBO

3.0

100

˚ C

Total Power Dissipation

Junction Temperature

Storage Temperature

125

T^j

150

Tstg

–60 to +150

Document No. P10385EJ2V0DS00 (2nd edition)

(Previous No. TD-2399)

Date Published July 1995 P

Printed in Japan

1993

12 3 4 5 6 7...10

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与2SC5006(NE85619)相关器件

型号	品牌	获取价格	描述	数据表
2SC5006-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5006-FB-A	NEC	获取价格	暂无描述
2SC5006T	BL Galaxy Electrical	获取价格	12V,0.1A,Medium Power NPN Bipolar Transistor
2SC5006-T1	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
2SC5006-T1-A	RENESAS	获取价格	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
2SC5006-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5006-T1-FB	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-3
2SC5006-T1FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5007	RENESAS	获取价格	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
2SC5007	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD