Datasheet > 2SC4881_04

2SC4881_04

更新时间： 2024-11-11 07:31:07

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
4页	124K
描述
High-Current Switching Applications

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中文翻译

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数据手册

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2SC4881_04 数据手册

2SC4881

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC4881

High-Current Switching Applications

Unit: mm

•

Low saturation voltage: V

= 0.4 V (max)

= 0.8 µs (typ.)

CE (sat)

High-speed switching: t

stg

Maximum Ratings

(Tc = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CBO

CEO

EBO

Collector current

Base current

Pulse

2.0

Ta = 25°C

Tc = 25°C

Collector power

dissipation

JEDEC

JEITA

―

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

TOSHIBA

2-10R1A

Weight: 1.7 g (typ.)

Electrical Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

= 50 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

―

µA

CBO

Emitter cut-off current

= 6 V, I = 0

EBO

Collector-emitter breakdown voltage

= 10 mA, I = 0

100

―

(BR) CEO

= 1 V, I = 1 A

―

320

―

FE (1)

DC current gain

= 1 V, I = 2.5 A

―

FE (2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

= 2.5 A, I = 125 mA

0.25

1.0

100

0.4

1.3

―

CE (sat)

BE (sat)

= 2.5 A, I = 125 mA

―

= 4 V, I = 1 A

―

MHz

Collector output capacitance

= 10 V, I = 0, f = 1 MHz

―

Turn-on time

―

0.1

0.8

0.1

―

Output

20 µs

Input

Switching time

µs

Storage time

Fall time

stg

= 30 V

= −I = 125 mA, duty cycle ≤ 1%

2004-07-26

12 3 4

中文翻译

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