Datasheet > 2SC4885

2SC4885

更新时间： 2024-11-10 22:52:43

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管光电二极管
页数	文件大小	规格书
12页	83K
描述
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC4885 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC4885

NPN SILICON EPITAXIAL TRANSISTOR

3 PINS SUPER MINI MOLD

PACKAGE DIMENSIONS

(Units: mm)

FEATURES

•

Excellent Low NF in Low Frequency Band

Low Voltage Use

2.1±0.1

1.25±0.1

Low C^ob: 0.9 pF TYP.

Low Noise Voltage : 90 mV TYP.

Super Mini Mold Package. EIAJ : SC-70

ABSOLUTE MAXIMUM RATINGS (T^a= 25 C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

Marking

3.0

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

120

T^j

125

T^stg

55 to +125

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

ELECTRICAL CHARACTERISTICS (T^a= 25 C)

PARAMETER

Collector Cutoff Current

Emitter Cutoff Current

Collector to Base Saturation Voltage

DC Current Gain

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

I^CBO

0.1

0.3

150

V^CB= 15 V, I^E= 0

I^EBO

V^EB= 2 V, I^C= 0

V^{CE (sat)}

h^FE

h^FE= 10, I^C= 5 mA

^CE= 5 V, I^C= 5 mA

Gain Bandwidth Product

Collecter Capacitance

Insertion Power Gain

Noise Figure

f^T

2.5

3.5

0.8

9.0

3.0

GHz

V^CE= 5 V, I^C= 5 mA

C^ob

1.2

V^CB= 5 V, I^E= 0, f = 1 MHz

V^CE= 5 V, I^C= 5 mA, f = 1 GHz

See Test Cirucit

S^21e

7.0

Noise Voltage

200

*1 Pulse Measurement PW 350 s, Duty Cycle 2 %

h^FEClassification

Rank

Marking

h^FE

R13

60 to 150

Document No. P10410EJ2V0DS00 (2nd edition)

(Previous No, TC-2365)

Date Published March 1997 N

Printed in Japan

1993

12 3 4 5 6 7...12

中文翻译

下载PDF

与2SC4885相关器件

型号	品牌	获取价格	描述	数据表
2SC4885-R13	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4886	SANKEN	获取价格	Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose)
2SC4886	SAVANTIC	获取价格	Silicon NPN Power Transistors
2SC4886	ISC	获取价格	Silicon NPN Power Transistors
2SC4886	NJSEMI	获取价格	Trans GP BJT NPN 150V 8A 3-Pin(3+Tab) TO-3PF
2SC4886_01	SANKEN	获取价格	Silicon NPN Epitaxial Planar Transistor
2SC4886O	SANKEN	获取价格	Power Bipolar Transistor, 14A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC4886O	ALLEGRO	获取价格	Power Bipolar Transistor, 14A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC4886P	ISC	获取价格	暂无描述
2SC4886P	SANKEN	获取价格	Power Bipolar Transistor, 14A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,