Datasheet > 2SC4885

2SC4885

更新时间： 2024-09-09 22:52:43

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管光电二极管
页数	文件大小	规格书
12页	83K
描述
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD

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中文翻译

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2SC4885 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC4885

NPN SILICON EPITAXIAL TRANSISTOR

3 PINS SUPER MINI MOLD

PACKAGE DIMENSIONS

(Units: mm)

FEATURES

•

Excellent Low NF in Low Frequency Band

Low Voltage Use

2.1±0.1

1.25±0.1

Low C^ob: 0.9 pF TYP.

Low Noise Voltage : 90 mV TYP.

Super Mini Mold Package. EIAJ : SC-70

ABSOLUTE MAXIMUM RATINGS (T^a= 25 C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

Marking

3.0

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

120

T^j

125

T^stg

55 to +125

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

ELECTRICAL CHARACTERISTICS (T^a= 25 C)

PARAMETER

Collector Cutoff Current

Emitter Cutoff Current

Collector to Base Saturation Voltage

DC Current Gain

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

I^CBO

0.1

0.3

150

V^CB= 15 V, I^E= 0

I^EBO

V^EB= 2 V, I^C= 0

V^{CE (sat)}

h^FE

h^FE= 10, I^C= 5 mA

^CE= 5 V, I^C= 5 mA

Gain Bandwidth Product

Collecter Capacitance

Insertion Power Gain

Noise Figure

f^T

2.5

3.5

0.8

9.0

3.0

GHz

V^CE= 5 V, I^C= 5 mA

C^ob

1.2

V^CB= 5 V, I^E= 0, f = 1 MHz

V^CE= 5 V, I^C= 5 mA, f = 1 GHz

See Test Cirucit

S^21e

7.0

Noise Voltage

200

*1 Pulse Measurement PW 350 s, Duty Cycle 2 %

h^FEClassification

Rank

Marking

h^FE

R13

60 to 150

Document No. P10410EJ2V0DS00 (2nd edition)

(Previous No, TC-2365)

Date Published March 1997 N

Printed in Japan

1993

12 3 4 5 6 7...12

中文翻译

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