2SC4898

更新时间： 2024-09-13 22:52:43

品牌	Logo	应用领域
松下 - PANASONIC		开关
页数	文件大小	规格书
2页	42K
描述
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

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2SC4898 数据手册

Power Transistors

2SC4898

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Unit: mm

4.6±0.2

Features

High-speed switching

9.9±0.3

■

2.9±0.2

●

High collector to base voltage V_CBO

φ3.2±0.1

●

Low collector to emitter saturation voltage V_CE(sat)

1.4±0.2

2.6±0.1

Absolute Maximum Ratings (T =25˚C)

■

1.6±0.2

Parameter

Symbol

V_CBO

V_CEO

I_CP

Ratings

Unit

0.8±0.1

0.55±0.15

Collector to base voltage

Collector to emitter voltage

Peak collector current

Collector current

1000

2.54±0.3

5.08±0.5

500

I_C

1:Base

2:Collector

3:Emitter

TO–220D Full Pack Package

Collector power T_C=25°C

P_C

dissipation

Ta=25°C

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

I_EBO

h_FE

Conditions

min

typ

max

100

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= 1000V, I_E= 0

V_EB= 9V, I_C= 0

V_CE= 5V, I_C= 1A

I_C= 3A, I_B= 0.6A

µA

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

MHz

µs

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

_CE= 10V, I_C= 0.5A, f = 1MHz

1.5

I_C= 3A, I_B1= 0.6A, I_B2= – 0.6A,

V_CC= 250V

µs

1.0

µs

中文翻译

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