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2SC4544_07 PDF预览

2SC4544_07

更新时间: 2024-11-18 04:26:03
品牌 Logo 应用领域
东芝 - TOSHIBA PC
页数 文件大小 规格书
5页 134K
描述
Silicon NPN Triple Diffuse Type (PCT Process)

2SC4544_07 数据手册

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2SC4544  
TOSHIBA Transistor Silicon NPN Triple Diffuse Type (PCT Process)  
2SC4544  
High-Voltage Switching and Amplifier Applications  
Unit: mm  
Color TV Horizontal Driver Applications  
Color TV Chroma Output Applications  
High voltage: V  
= 300 V  
(BR) CEO  
Small collector output capacitance: C = 3.0 pF (typ.)  
ob  
Collector metal (fin) is fully covered with mold resin.  
Absolute Maximum Ratings (Tc = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
300  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
300  
7
V
I
100  
mA  
mA  
C
Base current  
I
50  
JEDEC  
JEITA  
B
Ta = 25°C  
Tc = 25°C  
2
8
SC-67  
2-10R1A  
Collector power  
dissipation  
P
W
C
TOSHIBA  
Junction temperature  
T
150  
°C  
°C  
j
Weight: 1.7 g (typ.)  
Storage temperature range  
T
stg  
55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2006-11-10  

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