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2SC4548 PDF预览

2SC4548

更新时间: 2024-11-20 07:31:03
品牌 Logo 应用领域
金誉半导体 - HTSEMI 晶体晶体管
页数 文件大小 规格书
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描述
TRANSISTOR(NPN)

2SC4548 数据手册

  
2SC4548  
SOT-89-3L  
TRANSISTOR(NPN)  
1. BASE  
FEATURES  
2. COLLECTOR  
3. EMITTER  
z
z
z
Small Flat Package  
High Breakdown Voltage  
Excellent hFE Linearity  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Value  
400  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
400  
V
5
V
Collector Current  
200  
mA  
mW  
/W  
PC  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
500  
RθJA  
Tj  
250  
150  
Tstg  
Storage Temperature  
-55~+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
Min  
400  
400  
5
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC=10µA,IE=0  
IC=1mA,IB=0  
V
IE=10µA,IC=0  
V
VCB=300V,IE=0  
VEB=4V,IC=0  
0.1  
0.1  
200  
0.6  
1
µA  
µA  
Emitter cut-off current  
IEBO  
DC current gain  
hFE  
VCE=10V, IC=50mA  
IC=50mA,IB=5mA  
IC=50mA,IB=5mA  
VCE=30V,IC=10mA  
VCB=30V, IE=0, f=1MHz  
60  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
VCE(sat)  
VBE(sat)  
fT  
V
V
70  
4
MHz  
pF  
Collector output capacitance  
Cob  
CLASSIFICATION OF hFE  
RANK  
RANGE  
D
E
60120  
100200  
MARKING  
CN  
1
JinYu  
semiconductor  
www.htsemi.com  

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