Datasheet > 2SC4548-E

2SC4548-E

更新时间： 2024-11-19 01:20:43

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
2页	182K
描述
NPN Epitaxial Planar Silicon Transistors

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中文翻译

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数据手册

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2SC4548-E 数据手册

M C C

2SC4548-D

2SC4548-E

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

•

Halogen free available upon request by adding suffix "-HF"

Small Flat Package

NPN Epitaxial

Planar Silicon

•

Low collector-to-emitter saturation voltage.

Fast switching speed.

Epoxy meets UL 94 V-0 flammability rating

•

Moisture Sensitivity Level 1

Lead Free Finish/Rohs Compliant ("P"Suffix designates

RoHS Compliant. See ordering information)

ꢀ

Transistors

•

ꢀ

Maximum Ratings

ꢀ

SOT-89

ꢀ

Symbol

Rating

400

Unit

ꢀ

V_CEO

Collector-Emitter Voltage

ꢀ

V_CBO

V_EBO

Collector-Base Voltage

Emitter-Base Voltage

400

5.0

ꢀ

I_C

Collector Current

0.2

ꢀ

P_C

T_J

T_STG

Collector dissipation

Junction Temperature

Storage Temperature

500

-55 to +150

^OC

ꢀ

^OC

ꢀ

Electrical Characteristics @ 25^OC Unless Otherwise Specified

ꢀ

Symbol

Parameter

Min

Typ Max

Units

ꢀ

OFF CHARACTERISTICS

ꢀ

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Collector-Base Breakdown Voltage

(I_C=10µAdc, I_E=0)

400

5.0

---

Vdc

ꢀ

Collector-Emitter Breakdown Voltage

(I =1.0mAdc,I =0)

ꢀ

Collector-Emitter Breakdown Voltage

---

Vdc

ꢀ

(I =10µAdc, I_C=0)

ꢀ

Collector Cutoff Current

(V_CB=300Vdc,I_E=0)

Emitter Cutoff Current

(V_EB=4.0Vdc, I_C=0)

0.1

µAdc

mAdc

1. Base

I_EBO

---

ꢀ

2. Collector

3. Emitter

ON CHARACTERISTICS

ꢀ

h_FE

DC Current Gain

(I_C=50mAdc, V_CE=10Vdc)

---

200

---

ꢈꢀꢇꢄꢁꢅꢀꢁꢅꢆ

V_CE(sat)

V_BE(sat)

Collector-Emitter Saturation Voltage

(I_C=50mAdc, I_B=5mAdc)

0.6

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ꢇꢇꢆ

ꢁꢋꢌꢄꢅꢆ

ꢆ

Vdc

ꢇꢀꢁꢆ

ꢍꢎꢏꢐꢆ

ꢇꢉꢊꢆ

ꢇꢀꢁꢆ

ꢒꢍꢐꢓꢆ

1.55

ꢇꢉꢊꢆ

ꢒꢍꢔꢕꢆ

ꢚꢚꢚꢚꢚ

ꢉꢆ

ꢖ

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Collector-Emitter Saturation Voltage

(I_C=50mAdc, I_B=5mAdc)

1.0

.061

ꢚꢚꢚꢚꢚ

REF.

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ꢂꢆ

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ꢄꢆ

ꢙꢆ

ꢝꢆ

ꢃꢆ

ꢞꢆ

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ꢍꢕꢐꢎꢆ

ꢍꢕꢓꢘꢆ

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ꢐꢍꢕꢕꢆ

ꢕꢍꢐꢐꢆ

ꢕꢍꢐꢑꢆ

ꢎꢍꢒꢕꢆ

ꢒꢍ25ꢆ

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ꢘꢍꢗꢒꢆ

ꢚꢚꢚꢚꢚꢆ

ꢆ

f_T

Gain-Bandwidth product

(V_CE=30V, I_C=10mA, )

Out Capacitance

---

MHz

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ꢕꢍꢒꢑꢆ

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ꢎꢍꢔꢕꢆ

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Cob

(V_CB=30V, f=1.0MHz,IE=0)

ꢆ

hFE[1] CLASSIFICATION

Rank

Range

Marking

60-120

100-200

www.mccsemi.com

1 of 2

Revision: B

2013/01/01

中文翻译

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与2SC4548-E相关器件

型号	品牌	获取价格	描述	数据表
2SC4548E-TD-E	ROCHESTER	获取价格	200mA, 400V, NPN, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, PCP, 3 PIN
2SC4548-E-TP	MCC	获取价格	Small Signal Bipolar Transistor,
2SC4548G-X-AB3-R	UTC	获取价格	HIGH VOLTAGE DRIVER APPLICATION
2SC4548L-X-AB3-R	UTC	获取价格	HIGH VOLTAGE DRIVER APPLICATION
2SC4548R	BL Galaxy Electrical	获取价格	400V,0.2A,General Purpose NPN Bipolar Transistor
2SC4549	ISC	获取价格	isc Silicon NPN Power Transistor
2SC4549	SAVANTIC	获取价格	Silicon NPN Power Transistors
2SC454RF	HITACHI	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SC454RR	HITACHI	获取价格	100mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SC454TZ	HITACHI	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

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