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2SC4548D-TD-E PDF预览

2SC4548D-TD-E

更新时间: 2024-11-18 20:06:35
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 126K
描述
TRANSISTOR,BJT,NPN,400V V(BR)CEO,200MA I(C),SOT-89

2SC4548D-TD-E 技术参数

是否Rohs认证: 符合生命周期:Lifetime Buy
Reach Compliance Code:not_compliantFactory Lead Time:1 week
风险等级:5.58最大集电极电流 (IC):0.2 A
配置:Single最小直流电流增益 (hFE):60
JESD-609代码:e6湿度敏感等级:1
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):1.3 W子类别:Other Transistors
表面贴装:YES端子面层:Tin/Bismuth (Sn/Bi)
Base Number Matches:1

2SC4548D-TD-E 数据手册

 浏览型号2SC4548D-TD-E的Datasheet PDF文件第2页浏览型号2SC4548D-TD-E的Datasheet PDF文件第3页浏览型号2SC4548D-TD-E的Datasheet PDF文件第4页 
Ordering number : EN3188A  
PNP Epitaxial Planar Silicon Transistor  
NPN Triple Diffuesd Planar Silicon Transistor  
2SA1740 / 2SC4548  
High-Voltage Driver Applications  
Features  
High breakdown votlage.  
Adoption of MBIT process.  
Excellent h linearlity.  
FE  
Specifications ( ) : 2SA1740  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
V
(--)400  
(--)400  
(--)5  
CBO  
CEO  
EBO  
V
V
I
I
(--)200  
(--)400  
1.3  
mA  
mA  
W
C
Collector Current (Pulse)  
Collector Dissipation  
CP  
P
Mounted on a ceramic board (250mm20.8mm)  
C
Junction Temperature  
Storage Temperature  
Tj  
150  
°C  
°C  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
I
I
V
CB  
V
EB  
V
CE  
=(--)300V, I =0A  
(--)0.1  
(--)0.1  
200*  
µA  
µA  
CBO  
E
=(--)4V, I =0A  
EBO  
C
h
=(--)10V, I =(--)50mA  
60*  
FE  
C
Marking 2SA1740 : AK  
2SC4548 : CN  
Continued on next page.  
*: The 2SA1740 / 2SC4548 are classified by 50mA h as follows:  
FE  
Rank  
D
E
h
FE  
60 to 120  
100 to 200  
© 2011, SCILLC. All rights reserved.  
Jan-2011, Rev. 0  
Publication Order Number:  
www.onsemi.com  
2SA1740_2SC4548/D  

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