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2SC4548 PDF预览

2SC4548

更新时间: 2024-11-18 04:26:03
品牌 Logo 应用领域
友顺 - UTC 晶体驱动器晶体管高压
页数 文件大小 规格书
4页 187K
描述
HIGH VOLTAGE DRIVER APPLICATION

2SC4548 数据手册

 浏览型号2SC4548的Datasheet PDF文件第2页浏览型号2SC4548的Datasheet PDF文件第3页浏览型号2SC4548的Datasheet PDF文件第4页 
UTC2SC4548 NPN EPITAXIAL PLANAR SILICON TRANSISTOR  
HIGH VOLTAGE DRIVER  
APPLICATION  
1
FEATURES  
*High breakdown voltage.  
*Excellent hFE linearity.  
SOT-89  
1:EMITTER 2:COLLECTOR 3:BASE  
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
Ic  
RATING  
400  
400  
5
200  
400  
1.3  
150  
UNIT  
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Collector Current (PULSE)  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
V
mA  
mA  
W
°C  
°C  
Icp  
Pc  
Tj  
Tstg  
-55 ~ +150  
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
Collect-Base Breakdown Voltage  
Collect-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
SYMBOL  
BVCBO  
BVCEO  
BVEBO  
ICBO  
TEST CONDITIONS  
IC= 10µA,IE=0  
MIN TYP MAX UNIT  
400  
400  
5
V
V
V
µA  
µA  
IC= 1mA,IB=0,RBE=∞  
IE= 10µA,IC=0  
VCB= 300V,IE=0  
VEB=4V,IC=0  
0.1  
0.1  
200  
Emitter Cutoff Current  
IEBO  
hFE  
VCE(sat)  
VBE(sat)  
Cob  
Cre  
fT  
ton  
DC Current Transfer Ratio  
Collect-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Output Capacitance  
Reverse Transfer Capacitance  
Gain-Bandwidth Product  
Turn-on Time  
VCE=10V, Ic=50mA  
IC=50mA,IB=5mA  
IC=50mA,IB=5mA  
VCB=30V, f=1MHz  
VCB=30V,f=1MHz  
VCE=30V,IC=10mA  
See test circuit  
60  
0.6  
V
V
1.0  
4
3
70  
0.25  
5.0  
pF  
pF  
MHz  
µs  
Turn-off Time  
toff  
See test circuit  
µs  
1
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R208-027,A  

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