Datasheet > 2SC4548

2SC4548

更新时间： 2023-12-06 20:10:14

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1277K
描述
SOT-89-3L

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2SC4548 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

2SC4548 TRANSISTOR (NPN)

1. BASE

FEATURES

2. COLLECTOR

3. EMITTER

Small Flat Package

High Breakdown Voltage

Excellent h_FELinearity

MARKING

Solid dot = Green molding compound device.

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

400

Unit

Collector-Emitter Voltage

400

Emitter-Base Voltage

Collector Current

200

℃/W

℃

P_C

Collector Power Dissipation

500

R_θJA

T_J,T_stg

Thermal Resistance From Junction To Ambient

Operation Junction and Storage Temperature Range

250

-55~+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=10µA,I_E=0

Min

400

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=1mA,I_B=0

I_E=10µA,I_C=0

V_CB=300V,I_E=0

0.1

200

0.6

µA

Emitter cut-off current

I_EBO

V_EB=4V,I_C=0

DC current gain

h_FE

V_CE=10V, I_C=50mA

I_C=50mA,I_B=5mA

V^CE=30V,I^C=10mA

V_CB=30V, I_E=0, f=1MHz

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

RANK

RANGE

60–120

100–200

www.jscj-elec.com

Rev. - 2.3

12 3 4

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