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2SC4543 PDF预览

2SC4543

更新时间: 2024-11-20 22:40:03
品牌 Logo 应用领域
松下 - PANASONIC 视频放大器
页数 文件大小 规格书
2页 39K
描述
Silicon NPN epitaxial planer type(For video amplifier)

2SC4543 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SC-62
包装说明:SMALL OUTLINE, R-PSSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.87
外壳连接:COLLECTOR最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):20JESD-30 代码:R-PSSO-F3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):350 MHz

2SC4543 数据手册

 浏览型号2SC4543的Datasheet PDF文件第2页 
Transistor  
2SC4543  
Silicon NPN epitaxial planer type  
For video amplifier  
Unit: mm  
1.5±0.1  
4.5±0.1  
1.6±0.2  
Features  
High transition frequency fT.  
Small collector output capacitance Cob.  
45°  
Wide current range.  
0.4±0.08  
0.4±0.04  
0.5±0.08  
1.5±0.1  
Absolute Maximum Ratings (Ta=25˚C)  
3.0±0.15  
Parameter  
Symbol  
Ratings  
110  
Unit  
V
3
2
1
Collector to base voltage  
Collector to emitter voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
VCBO  
*1  
VCER  
100  
V
marking  
VCEO  
VEBO  
ICP  
50  
V
3.5  
V
300  
mA  
mA  
W
1:Base  
2:Collector  
3:Emitter  
EIAJ:SC–62  
Mini Power Type Package  
IC  
150  
*2  
Collector power dissipation  
Junction temperature  
Storage temperature  
REB = 1.2k  
PC  
1.0  
Marking symbol : 1F  
Tj  
150  
˚C  
˚C  
Tstg  
–55 ~ +150  
*1  
*2  
Printed circuit board: Copper foil area of 1cm2 or more, and the board  
thickness of 1.7mm for the collector portion  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICEO  
Conditions  
VCE = 35V, IB = 0  
min  
typ  
max  
Unit  
µA  
V
Collector cutoff current  
Collector to base voltage  
10  
VCBO  
VCER  
VCEO  
VEBO  
hFE  
IC = 100µA, IE = 0  
110  
100  
50  
IC = 500µA, RBE = 470Ω  
IC = 1mA, IB = 0  
V
Collector to emitter voltage  
V
Emitter to base voltage  
IE = 100µA, IC = 0  
3.5  
20  
V
Forward current transfer ratio  
VCE = 5V, IC = 100mA*  
IC = 150mA, IB = 15mA*  
VCB = 10V, IE = –10mA, f = 200MHz  
VCB = 10V, IE = –110mA*, f = 200MHz  
VCB = 30V, IE = 0, f = 1MHz  
Collector to emitter saturation voltage VCE(sat)  
0.5  
V
fT1  
300  
350  
3
MHz  
MHz  
pF  
Transition frequency  
fT2  
Collector output capacitance  
Cob  
* Pulse measurement  
1

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