Datasheet > 2SC4544

2SC4544

更新时间： 2024-11-22 14:55:31

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
3页	796K
描述
双极型晶体管

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中文翻译

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技术参数
数据手册

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2SC4544 技术参数

极性：	NPN	Collector-emitter breakdown voltage：	300
Collector Current - Continuous：	0.1	DC current gain - Min：	30
DC current gain - Max：	200	Transition frequency：	70
Package：	TO-220AB	Storage Temperature Range：	-55-150
class：	Transistors

2SC4544 数据手册

2SC4544(NPN)

TO-220 Transistor

TO-220

1. BASE

2. COLLECTOR

3. EMITTER

Features

High voltage: V _{(BR) CEO}= 300 V

Small collector output capacitance: C_ob= 3.0 pF (typ.)

Collector metal (fin) is fully covered with mold resin.

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

300

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Dimensions in inches and (millimeters)

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

0.1

P_C

℃

T_J

150

-55-150

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

300

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=100µA,I_E=0

V_(BR)CEOI_C=10mA,I_B=0

V_(BR)EBOI_E=100µA,I_C=0

I_CBO

I_EBO

V_CB=240V,I_E=0

1.0

µA

Emitter cut-off current

V_EB=7V,I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

V_CE=10V,I_C=4mA

V_CE=10V,I_C=20mA

I_C=10mA, I_B=1mA

V_CE=10V,I_C=20mA

V_CB=20V,I_E=0,f=1MHz

DC current gain

200

1.0

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

MHz

Collector output capacitance

C_ob

3.0

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

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