Datasheet > 2SC4541_04

2SC4541_04

更新时间： 2024-01-19 18:11:16

品牌	Logo	应用领域
东芝 - TOSHIBA		开关放大器电源开关功率放大器
页数	文件大小	规格书
5页	166K
描述
Power Amplifier Applications Power Switching Applications

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2SC4541_04 数据手册

2SC4541

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC4541

Power Amplifier Applications

Power Switching Applications

Unit: mm

•

Low saturation voltage: V

CE (sat)

= 0.5 V (max) (I = 1.5 A)

High speed switching time: t

Small flat package

= 0.5 µs (typ.)

stg

= 1.0 to 2.0 W (mounted on a ceramic substrate)

Complementary to 2SA1736

Maximum Ratings

(Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

0.6

500

JEDEC

JEITA

―

Collector power dissipation

SC-62

2-5K1A

Collector power dissipation

1000

(Note)

TOSHIBA

Junction temperature

150

°C

Weight: 0.05 g (typ.)

Storage temperature range

stg

−55 to 150

Note: Mounted on a ceramic substrate (250 mm²× 0.8 t)

2004-07-07

12 3 4 5

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