Datasheet > 2SC3858_15

2SC3858_15

更新时间： 2024-11-24 01:20:39

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
4页	98K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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2SC3858_15 数据手册

Product Specification

www.jmnic.com

Silicon NPN Power Transistors

2SC3858

DESCRIPTION

·With MT-200 package

·Complement to type 2SA1494

APPLICATIONS

·Audio and general purpose

PINNING(see Fig.2)

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (MT-200) and symbol

Emitter

Absolute maximum ratings (Ta=25°C)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

200

UNIT

Open emitter

Open base

Open collector

I_B

Base current

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

200

150

-55~150

℃

T_j

T_stg

12 3 4

中文翻译

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与2SC3858_15相关器件

型号	品牌	获取价格	描述	数据表
2SC3858_2014	JMNIC	获取价格	Silicon NPN Power Transistors
2SC3858G	ISC	获取价格	Transistor
2SC3858G	SANKEN	获取价格	Power Bipolar Transistor, 17A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC3858P	ISC	获取价格	Transistor
2SC3858P	SANKEN	获取价格	Power Bipolar Transistor, 17A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC3858Y	SANKEN	获取价格	Power Bipolar Transistor, 17A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC3858Y	ISC	获取价格	Transistor
2SC3859	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-23
2SC385A	TOSHIBA	获取价格	2SC385A
2SC3860	SANYO	获取价格	PNP/ NPN EPITAXIAL PLANAR SILICON TRANSISTORS