Datasheet > 2SC3866_1

2SC3866_1

更新时间： 2024-11-06 06:20:31

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
4页	243K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

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2SC3866_1 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC3866

DESCRIPTION

·With TO-220F package

·High speed switching

·High voltage

·High reliability

APPLICATIONS

·Switching regulators

·Ultrasonic generators

·High frequency inverters

·General purpose power amplifiers

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

900

800

UNIT

Open base

Open collector

I_B

Base current

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

ꢀ

150

-55~150

T_j

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-C}

Thermal resistance junction case

3.0

ꢀ/W

12 3 4

中文翻译

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