5秒后页面跳转
2SC3866_2014 PDF预览

2SC3866_2014

更新时间: 2024-11-07 01:19:43
品牌 Logo 应用领域
锦美电子 - JMNIC /
页数 文件大小 规格书
2页 67K
描述
Silicon NPN Power Transistor

2SC3866_2014 数据手册

 浏览型号2SC3866_2014的Datasheet PDF文件第2页 
Product Specification  
www.jmnic.com  
Silicon NPN Power Transistor  
2SC3866  
DESCRIPTION  
·High Breakdown Voltage-  
: V(BR)CBO= 900V(Min)  
·High Switching Speed  
·High Reliability  
APPLICATIONS  
·Switching regulators  
·Ultrasonic generators  
·High frequency inverters  
·General purpose power amplifiers  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
900  
800  
10  
UNIT  
V
V
V
Collector Current-Continuous  
Base Current-Continuous  
3
A
IB  
1
A
Collector Power Dissipation  
@ TC=25  
PC  
40  
W
TJ  
Junction Temperature  
150  
-55~150  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
1.5  
UNIT  
Thermal Resistance,Junction to Case  
/W  
Rth j-c  

与2SC3866_2014相关器件

型号 品牌 获取价格 描述 数据表
2SC3867 HITACHI

获取价格

Silicon NPN Epitaxial
2SC3867DI HITACHI

获取价格

Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC3867DI-TL HITACHI

获取价格

暂无描述
2SC3867DI-TR HITACHI

获取价格

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3868 PANASONIC

获取价格

Silicon NPN triple diffusion planar type
2SC3868 JMNIC

获取价格

Silicon NPN Power Transistors
2SC3868 SAVANTIC

获取价格

Silicon NPN Power Transistors
2SC3868 ISC

获取价格

Silicon NPN Power Transistors
2SC3868_15 JMNIC

获取价格

Silicon NPN Power Transistors
2SC3868_2014 JMNIC

获取价格

Silicon NPN Power Transistors