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2SC3803-O(TE12L,F) PDF预览

2SC3803-O(TE12L,F)

更新时间: 2024-11-02 20:04:27
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
4页 161K
描述
TRANSISTOR,BJT,NPN,45V V(BR)CEO,200MA I(C),SC-62

2SC3803-O(TE12L,F) 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.61最大集电极电流 (IC):0.2 A
配置:Single最小直流电流增益 (hFE):70
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):1 W子类别:Other Transistors
表面贴装:YES标称过渡频率 (fT):100 MHz
Base Number Matches:1

2SC3803-O(TE12L,F) 数据手册

 浏览型号2SC3803-O(TE12L,F)的Datasheet PDF文件第2页浏览型号2SC3803-O(TE12L,F)的Datasheet PDF文件第3页浏览型号2SC3803-O(TE12L,F)的Datasheet PDF文件第4页 
2SC3803  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)  
2SC3803  
High Frequency Amplifier Applications  
Unit: mm  
Video Amplifier Applications  
High Speed Switching Applications  
High transition frequency: f = 200 MHz (typ.)  
T
Low collector output capacitance: C = 3.5 pF (typ.)  
ob  
Complementary to 2SA1483  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
60  
45  
V
V
Collector-emitter voltage  
Emitter-base voltage  
5
V
Continuous collector current  
Continuous base current  
I
200  
50  
mA  
mA  
C
PW-MINI  
JEDEC  
I
B
P
P
500  
C
C
Collector power dissipation  
mW  
JEITA  
SC-62  
2-5K1A  
1000  
(Note 1)  
TOSHIBA  
Junction temperature  
T
150  
°C  
°C  
j
Weight: 0.05 g (typ.)  
Storage temperature range  
T
stg  
55 to 150  
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)  
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2009-12-21  

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