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2SC3803YTE12L PDF预览

2SC3803YTE12L

更新时间: 2024-11-20 14:46:19
品牌 Logo 应用领域
东芝 - TOSHIBA 开关晶体管
页数 文件大小 规格书
4页 156K
描述
TRANSISTOR 200 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

2SC3803YTE12L 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.76
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):0.2 A基于收集器的最大容量:5 pF
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):20JESD-30 代码:R-PSSO-F3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
VCEsat-Max:0.3 VBase Number Matches:1

2SC3803YTE12L 数据手册

 浏览型号2SC3803YTE12L的Datasheet PDF文件第2页浏览型号2SC3803YTE12L的Datasheet PDF文件第3页浏览型号2SC3803YTE12L的Datasheet PDF文件第4页 
2SC3803  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)  
2SC3803  
High Frequency Amplifier Applications  
Unit: mm  
Video Amplifier Applications  
High Speed Switching Applications  
High transition frequency: f = 200 MHz (typ.)  
T
Low collector output capacitance: C = 3.5 pF (typ.)  
ob  
Complementary to 2SA1483  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
60  
45  
V
V
Collector-emitter voltage  
Emitter-base voltage  
5
V
Continuous collector current  
Continuous base current  
I
200  
50  
mA  
mA  
C
PW-MINI  
JEDEC  
I
B
P
P
500  
C
C
Collector power dissipation  
mW  
JEITA  
SC-62  
2-5K1A  
1000  
(Note 1)  
TOSHIBA  
Junction temperature  
T
150  
°C  
°C  
j
Weight: 0.05 g (typ.)  
Storage temperature range  
T
stg  
55 to 150  
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)  
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2009-12-21  

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