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2SC3807MP PDF预览

2SC3807MP

更新时间： 2024-11-30 04:25:59
品牌 Logo 应用领域
三洋 - SANYO 晶体放大器晶体管
页数 文件大小 规格书
4页 45K
描述
NPN Epitaxial Planar Silicon Transistor 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications

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2SC3807MP 技术参数

生命周期：Transferred包装说明：CYLINDRICAL, R-PBCY-T3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.29.00.75
风险等级：5.42Is Samacsys：N
最大集电极电流 (IC)：2 A集电极-发射极最大电压：25 V
配置：SINGLE最小直流电流增益 (hFE)：600
JESD-30 代码：R-PBCY-T3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：CYLINDRICAL极性/信道类型：NPN
最大功率耗散 (Abs)：1.1 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子形式：THROUGH-HOLE端子位置：BOTTOM
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：260 MHzBase Number Matches：1

2SC3807MP 数据手册

 浏览型号2SC3807MP的Datasheet PDF文件第2页浏览型号2SC3807MP的Datasheet PDF文件第3页浏览型号2SC3807MP的Datasheet PDF文件第4页 
Ordering number : ENA0629  
SANYO Sem iconductors  
DATA S HEET  
NPN Epitaxial Planar Silicon Transistor  
25V / 2A High-h  
FE  
General-Purpose Amplifier Applications  
Low Frequency  
,
2SC3807MP  
Applications  
•
Low-frequency general-purpose amplifiers, drivers.  
Features  
•
•
•
•
•
Large current capacity (I =2A).  
Adoption of MBIT process.  
C
High DC current gain (h =1000 to 2000).  
FE  
Low collector-to-emitter saturation voltage (V (sat)≤0.5V).  
CE  
High V ≥15V).  
(V  
EBO EBO  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
30  
25  
17  
2
V
V
I
A
C
Collector Current (Pulse)  
Collector Dissipation  
I
4
A
CP  
P
1.1  
150  
W
°C  
°C  
C
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
--55 to +150  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
42507LA TI IM TC-00000660 No. A0629-1/4  
1234

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