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2SC3811 PDF预览

2SC3811

更新时间: 2024-09-27 22:39:59
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管开关
页数 文件大小 规格书
2页 44K
描述
Silicon NPN epitaxial planer type(For high speed switching)

2SC3811 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.83
Is Samacsys:N最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):60JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
最大功率耗散 (Abs):0.4 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):450 MHzBase Number Matches:1

2SC3811 数据手册

 浏览型号2SC3811的Datasheet PDF文件第2页 
Transistor  
2SC3811  
Silicon NPN epitaxial planer type  
For high speed switching  
Unit: mm  
4.0±0.2  
5.0±0.2  
Features  
High-speed switching.  
Low collector to emitter saturation voltage VCE(sat)  
.
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCES  
VEBO  
ICP  
Ratings  
Unit  
V
0.45+00..12  
0.45+00..12  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
40  
40  
V
1.27  
1.27  
5
V
300  
mA  
mA  
mW  
˚C  
1 2 3  
1:Emitter  
IC  
100  
2:Base  
3:Collector  
JEDEC:TO–92  
EIAJ:SC–43A  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
400  
2.54±0.15  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
0.1  
Unit  
µA  
Collector cutoff current  
Emitter cutoff current  
VCB = 40V, IE = 0  
VEB = 4V, IC = 0  
IEBO  
0.1  
µA  
*
Forward current transfer ratio  
hFE  
VCE = 1V, IC = 10mA  
60  
200  
0.25  
1.0  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
IC = 10mA, IB = 1mA  
0.17  
V
V
IC = 10mA, IB = 1mA  
Transition frequency  
Collector output capacitance  
Turn-on time  
fT  
VCB = 10V, IE = –10mA, f = 200MHz  
VCB = 10V, IE = 0, f = 1MHz  
450  
2
MHz  
pF  
ns  
Cob  
ton  
toff  
tstg  
6
17  
17  
10  
Turn-off time  
Refer to the measurment circuit  
ns  
Storage time  
ns  
*hFE Rank classification  
Rank  
hFE  
Q
R
60 ~ 120  
90 ~ 200  
1

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