2SC3824TX

更新时间： 2024-11-18 13:04:19

品牌	Logo	应用领域
松下 - PANASONIC		晶体晶体管功率双极晶体管开关光电二极管
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4页	100K
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2SC3824TX 数据手册

Power Transistors

2SC3824, 2SC3824A

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

Unit: mm

7.0 0.3

3.5 0.2

0˚ to 0.15˚

3.0 0.2

2.0 0.2

■ Features

• High-speed switching

• High collector-base voltage (Emitter open) V_CBO

• I type package enabling direct soldering of the radiating fin to the

printed circuit board, etc. of small electronic equipment

1.1 0.1

0.75 0.1 0.4 0.1

0.9 0.1

0˚ to 0.15˚

2.3 0.2

■ Absolute Maximum Ratings T_C= 25°C

4.6 0.4

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

900

Collector-emitter voltage (E-B short)

V_CES

V_CEO

900

2SC3824

800

Collector-emitter voltage

(Base open)

1: Base

2: Collector

3: Emitter

I-G1 Package

2SC3824A

900

Emitter-base voltage (Collector open) V_EBO

Collector current

Peak collector current

Collector power

I_C

I_CP

P_C

Note) Self-supported type package is also prepared.

dissipation

T_a= 25°C

1.3

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

■ Electrical Characteristics T_C= 25°C 3°C

Parameter

Symbol

Conditions

Min

800

900

Typ

Max

Unit

2SC3824

V_CEO

I_C= 1 mA, I_B= 0

Collector-emitter voltage

(Base open)

2SC3824A

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

I_CBO

I_EBO

h_FE1

h_FE2

V_CB= 900 V, I_E= 0

V_EB= 7 V, I_C= 0

µA



V_CE= 5 V, I_C= 0.05 A

V_CE= 5 V, I_C= 0.5 A

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Turn-on time

V_CE(sat)I_C= 0.2 A, I_B= 0.04 A

V_BE(sat)I_C= 0.2 A, I_B= 0.04 A

1.5

1.0

f_T

t_on

t_stg

t_f

V_CE= 10 V, I_C= 0.05 A, f = 1 MHz

MHz

µs

I_C= 0.2 A

1.0

3.0

1.0

Storage time

I_B1= 0.04 A, I_B2= − 0.08 A

V_CC= 250 V

µs

Fall time

µs

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: March 2003

SJD00113AED

12 3 4

中文翻译

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与2SC3824TX相关器件

型号	品牌	获取价格	描述	数据表
2SC3825	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 2A I(C) \| TO-221VAR
2SC3825H	PANASONIC	获取价格	Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC3825TX	PANASONIC	获取价格	Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SC3827-L	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3827-LT52	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3827-LT53	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3827-LT54	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3827-T1BT52	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3827-T1BT53	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC3827-T2B	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili

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