生命周期: | Obsolete | 包装说明: | PLASTIC, SC-59, 3 PIN |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最大集电极电流 (IC): | 0.02 A | 基于收集器的最大容量: | 1 pF |
集电极-发射极最大电压: | 15 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 60 | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 1300 MHz | VCEsat-Max: | 0.5 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC3827-LT53 | NEC |
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RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC3827-LT54 | NEC |
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RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC3827-T1BT52 | NEC |
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RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC3827-T1BT53 | NEC |
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RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC3827-T2B | NEC |
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RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC3827-T2BT52 | NEC |
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RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC3827-T2BT53 | NEC |
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RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC3827-T2BT54 | NEC |
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RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC3828 | TOSHIBA |
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TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SMQ, SC-61, 4 PIN, BIP RF Small | |
2SC3828TE85R | TOSHIBA |
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TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal |