Datasheet > 2SC3811R

2SC3811R

更新时间： 2024-11-17 23:20:15

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
3页	54K
描述
TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 100MA I(C) \| TO-92

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中文翻译

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数据手册

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2SC3811R 数据手册

Transistor

2SC3811

Silicon NPN epitaxial planer type

For high speed switching

Unit: mm

4.0±0.2

5.0±0.2

Features

High-speed switching.

■

●

Low collector to emitter saturation voltage V_CE(sat)

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CES

V_EBO

I_CP

Ratings

Unit

0.45–⁺0⁰.^.1²

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

1.27

300

˚C

1 2 3

1:Emitter

I_C

100

2:Base

3:Collector

JEDEC:TO–92

EIAJ:SC–43A

Collector power dissipation

Junction temperature

Storage temperature

P_C

400

2.54±0.15

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

0.1

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= 40V, I_E= 0

V_EB= 4V, I_C= 0

I_EBO

0.1

µA

Forward current transfer ratio

h_FE

V_CE= 1V, I_C= 10mA

200

0.25

1.0

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 10mA, I_B= 1mA

0.17

I_C= 10mA, I_B= 1mA

Transition frequency

Collector output capacitance

Turn-on time

f_T

V_CB= 10V, I_E= –10mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

450

MHz

C_ob

t_on

t_off

t_stg

Turn-off time

Refer to the measurment circuit

Storage time

^*h_FERank classification

Rank

h_FE

60 ~ 120

90 ~ 200

12 3

中文翻译

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