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2SC3824 PDF预览

2SC3824

更新时间: 2024-11-17 22:52:43
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管功率双极晶体管开关光电二极管
页数 文件大小 规格书
4页 100K
描述
Silicon NPN triple diffusion planar type

2SC3824 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.83
Is Samacsys:N最大集电极电流 (IC):1 A
集电极-发射极最大电压:800 V配置:SINGLE
最小直流电流增益 (hFE):3JESD-30 代码:R-PDSO-G2
JESD-609代码:e6湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):1.3 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzBase Number Matches:1

2SC3824 数据手册

 浏览型号2SC3824的Datasheet PDF文件第2页浏览型号2SC3824的Datasheet PDF文件第3页浏览型号2SC3824的Datasheet PDF文件第4页 
Power Transistors  
2SC3824, 2SC3824A  
Silicon NPN triple diffusion planar type  
For high breakdown voltage high-speed switching  
Unit: mm  
7.0 0.3  
3.5 0.2  
0˚ to 0.15˚  
3.0 0.2  
2.0 0.2  
Features  
High-speed switching  
High collector-base voltage (Emitter open) VCBO  
I type package enabling direct soldering of the radiating fin to the  
printed circuit board, etc. of small electronic equipment  
1.1 0.1  
0.75 0.1 0.4 0.1  
0.9 0.1  
0˚ to 0.15˚  
2.3 0.2  
Absolute Maximum Ratings TC = 25°C  
4.6 0.4  
2
Parameter  
Symbol  
Rating  
Unit  
V
1
3
Collector-base voltage (Emitter open) VCBO  
900  
Collector-emitter voltage (E-B short)  
VCES  
VCEO  
900  
V
2SC3824  
800  
V
Collector-emitter voltage  
(Base open)  
1: Base  
2: Collector  
3: Emitter  
I-G1 Package  
2SC3824A  
900  
Emitter-base voltage (Collector open) VEBO  
7
V
A
Collector current  
Peak collector current  
Collector power  
IC  
ICP  
PC  
1
Note) Self-supported type package is also prepared.  
2
15  
A
W
dissipation  
Ta = 25°C  
1.3  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
Electrical Characteristics TC = 25°C 3°C  
Parameter  
Symbol  
Conditions  
Min  
800  
900  
Typ  
Max  
Unit  
2SC3824  
VCEO  
IC = 1 mA, IB = 0  
V
Collector-emitter voltage  
(Base open)  
2SC3824A  
Collector-base cutoff current (Emitter open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
ICBO  
IEBO  
hFE1  
hFE2  
VCB = 900 V, IE = 0  
VEB = 7 V, IC = 0  
50  
50  
µA  
µA  
VCE = 5 V, IC = 0.05 A  
VCE = 5 V, IC = 0.5 A  
6
3
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
Turn-on time  
VCE(sat) IC = 0.2 A, IB = 0.04 A  
VBE(sat) IC = 0.2 A, IB = 0.04 A  
1.5  
1.0  
V
V
fT  
ton  
tstg  
tf  
VCE = 10 V, IC = 0.05 A, f = 1 MHz  
4
MHz  
µs  
IC = 0.2 A  
1.0  
3.0  
1.0  
Storage time  
IB1 = 0.04 A, IB2 = − 0.08 A  
VCC = 250 V  
µs  
Fall time  
µs  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: March 2003  
SJD00113AED  
1

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