Datasheet > 2SC3803-Y(TE12L,F)

2SC3803-Y(TE12L,F)

更新时间： 2024-11-21 10:32:27

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	161K
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2SC3803-Y(TE12L,F)

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2SC3803-Y(TE12L,F) 数据手册

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2SC3803

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC3803

High Frequency Amplifier Applications

Unit: mm

Video Amplifier Applications

High Speed Switching Applications

•

High transition frequency: f = 200 MHz (typ.)

Low collector output capacitance: C = 3.5 pF (typ.)

Complementary to 2SA1483

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Continuous collector current

Continuous base current

200

PW-MINI

JEDEC

―

500

Collector power dissipation

JEITA

SC-62

2-5K1A

1000

(Note 1)

TOSHIBA

Junction temperature

150

°C

Weight: 0.05 g (typ.)

Storage temperature range

stg

−55 to 150

Note 1: Mounted on a ceramic substrate (250 mm²× 0.8 t)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-12-21

12 3 4

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