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2SC3707 PDF预览

2SC3707

更新时间: 2024-11-17 22:52:43
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 41K
描述
Silicon NPN epitaxial planer type(For UHF amplification)

2SC3707 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.82
最大集电极电流 (IC):0.01 A集电极-发射极最大电压:7 V
配置:SINGLE最小直流电流增益 (hFE):50
最高频带:ULTRA HIGH FREQUENCY BANDJEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.05 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Bismuth (Sn/Bi)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):4000 MHz
Base Number Matches:1

2SC3707 数据手册

 浏览型号2SC3707的Datasheet PDF文件第2页 
Transistor  
2SC3707  
Silicon NPN epitaxial planer type  
For UHF amplification  
Unit: mm  
2.8 +00..32  
0.65±0.15  
1.5 +00..0255  
0.65±0.15  
Features  
Possible with the small current and low voltage.  
High transition frequency fT.  
Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
1
2
3
0.1 to 0.3  
Absolute Maximum Ratings (Ta=25˚C)  
0.4±0.2  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
10  
7
V
1:Bae  
JEDEC:TO–236  
EIAJ:SC–59  
Mini Type Package  
2
10  
V
2:Emitter  
3:Collector  
mA  
mW  
˚C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
50  
Marking symbol : 2X  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
1
Unit  
nA  
Collector cutoff current  
Emitter cutoff current  
Forward current transfer ratio  
Transition frequency  
VCB = 10V, IE = 0  
IEBO  
hFE  
fT  
VEB = 1.5V, IC = 0  
1
µA  
VCE = 1V, IC = 1mA  
50  
100  
4
150  
VCE = 1V, IC = 1mA, f = 800MHz  
VCB = 1V, IE = 0, f = 1MHz  
VCE = 1V, IC = 1mA, f = 800MHz  
VCE = 1V, IC = 1mA, f = 800MHz  
VCE = 1V, IC = 1mA, f = 800MHz  
GHz  
pF  
Collector output capacitance  
Foward transfer gain  
Cob  
| S21e  
0.4  
6
2
|
dB  
Maximum unilateral power gain  
Noise figure  
GUM  
NF  
15  
3.5  
dB  
dB  
Note: Handle the product with care because this is sensitive to the electrostatic breakdown by its structure.  
1

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