2SC3526

更新时间： 2024-11-22 22:52:43

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
2页	38K
描述
Silicon NPN epitaxial planer type(For display video output)

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中文翻译

获取价格

数据手册

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2SC3526 数据手册

Transistor

2SC3526(H)

Silicon NPN epitaxial planer type

For display video output

Unit: mm

5.9±0.2

4.9±0.2

Features

High transition frequency f_T.

■

●

Small collector output capacitance C_ob.

●

Wide current range.

0.7±0.1

2.54±0.15

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Symbol

Ratings

110

Unit

V_CBO

0.45⁺–0⁰.^.1²

V_CER

100

1.27

V_CEO

V_EBO

I_CP

1:Emitter

2:Collector

3:Base

EIAJ:SC–51

TO–92L Package

3.5

300

I_C

150

Collector power dissipation

Junction temperature

Storage temperature

^*R_EB= 470Ω

P_C

1.0

T_j

150

˚C

T_stg

–55 ~ +150

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CEO

Conditions

min

typ

max

Unit

µA

Collector cutoff current

V_CE= 35V, I_B= 0

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CBO

V_CER

V_CEO

V_EBO

h_FE

I_C= 100µA, I_E= 0

110

100

I_C= 500µA, R_BE= 470Ω

I_C= 1mA, I_B= 0

I_E= 100µA, I_C= 0

3.5

Forward current transfer ratio

V_CE= 5V, I_C= 100mA^*

I_C= 150mA, I_B= 15mA^*

V_CB= 10V, I_E= –10mA, f = 200MHz

V_CB= 10V, I_E= –110mA, f = 200MHz

V_CB= 30V, I_E= 0, f = 1MHz

Collector to emitter saturation voltage V_CE(sat)

0.5

f_T1

300

350

MHz

Transition frequency

f_T2

Collector output capacitance

^*Pulse measurement

C_ob

中文翻译

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