Datasheet > 2SC3356

2SC3356

更新时间： 2024-11-13 06:20:39

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
3页	247K
描述
NPN Silicon Plastic-Encapsulate Transistor

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2SC3356 数据手册

2SC3356

Silicon

NPN

Elektronische Bauelemente

Plastic-Encapsulate Transistor

A suffix of "-C" specifies halogen & lead-free

SOT-23

Min

Dim

Max

2.800 3.040

1.200 1.400

0.890 1.110

0.370 0.500

1.780 2.040

0.013 0.100

0.085 0.177

0.450 0.600

0.890 1.020

2.100 2.500

0.450 0.600

3.COLLECTOR

FEATURES

Top View

1.BASE

2.EMITTER

Power Dissipation

RoHS Compliant Product

All Dimension in mm

^oC

MAXIMUM RATINGS* T_A=25 unless otherwise noted

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

0.1

Collector Current -Continuous

Collector Dissipation

P_C

^oC

0.2

T_J, T_stg

-55~150

Junction and Storage Temperature

ELECTRICAL CHARACTERISTICS (Tamb =25 ^oC unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Ic=10µA, I_E=0

Ic= 1mA, I_B=0

I_E= 10µA, I_C=0

V_CB= 10 V , I_E=0

V_EB= 1V , I_C=0

V_CE= 10V, I_C= 20mA

µA

I_EBO

h_FE

300

Transition frequency

V_CE=10V, I_C= 20mA

GHz

f_T

Noise figure

V_CE=10V, I_C= 7mA, f = 1GHz

CLASSIFICATION OF h^FE

Marking

R23

R24

R25

Rank

50-100

80-160

125-250

Range

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 3

12 3

中文翻译

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