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2SC3284Y

更新时间: 2024-11-06 19:57:27
品牌 Logo 应用领域
急速微 - ALLEGRO /
页数 文件大小 规格书
1页 24K
描述
Power Bipolar Transistor, 14A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN

2SC3284Y 技术参数

生命周期:Active零件包装代码:TO-3P
包装说明:TO-3P, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.4最大集电极电流 (IC):14 A
集电极-发射极最大电压:150 V配置:SINGLE
最小直流电流增益 (hFE):90JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):60 MHzBase Number Matches:1

2SC3284Y 数据手册

  
LAP T 2 S C3 2 8 4  
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303)  
Application : Audio and General Purpose  
(Ta=25°C)  
Absolute maximum ratings  
Electrical Characteristics  
External Dimensions MT-100(TO3P)  
(Ta=25°C)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Symbol  
ICBO  
2SC3284  
2SC3284  
Conditions  
Unit  
µA  
µA  
V
Unit  
±0.2  
4.8  
±0.4  
15.6  
±0.1  
2.0  
100max  
100max  
150min  
50min  
9.6  
150  
VCB=150V  
V
IEBO  
150  
VEB=5V  
V
V(BR)CEO  
hFE  
5
IC=25mA  
V
a
±0.1  
ø3.2  
VCE=4V, IC=5A  
IC=5A, IB=0.5A  
VCE=12V, IE=2A  
VCB=10V, f=1MHz  
14  
3
A
b
V
MHz  
pF  
IB  
VCE(sat)  
fT  
2.0max  
60typ  
A
PC  
125(Tc=25°C)  
150  
W
°C  
°C  
2
3
Tj  
COB  
200typ  
+0.2  
-0.1  
+0.2  
-0.1  
Tstg  
hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)  
1.05  
0.65  
1.4  
–55 to +150  
±0.1  
±0.1  
5.45  
5.45  
Typical Switching Characteristics (Common Emitter)  
B
C
E
Weight : Approx 6.0g  
a. Type No.  
RL  
()  
VBB1  
(V)  
VBB2  
(V)  
IB1  
(A)  
IB2  
(A)  
ton  
(µs)  
tf  
(µs)  
VCC  
(V)  
IC  
(A)  
tstg  
(µs)  
b. Lot No.  
12  
10  
–5  
0.5  
–0.5  
0.2typ  
0.35typ  
60  
5
1.5typ  
IC VCE Characteristics (Typical)  
VCE(sat) IB Characteristics (Typical)  
IC VBE Temperature Characteristics (Typical)  
(VCE=4V)  
14  
14  
12  
3
10  
2
1
8
4
0
5
IC=10A  
IB=20mA  
5A  
0
0
0
1
2
3
4
0
0.2  
0.4  
0.6  
0.8  
1.0  
0
1
2
Collector-Emitter Voltage VCE(V)  
Base Current IB(A)  
Base-Emittor Voltage VBE(V)  
j-a t Characteristics  
hFE IC Characteristics (Typical)  
hFE IC Temperature Characteristics (Typical)  
θ
(VCE=4V)  
(VCE=4V)  
3
200  
100  
50  
200  
125˚C  
100  
1
25˚C  
Typ  
–30˚C  
0.5  
50  
20  
0.02  
20  
0.02  
0.1  
1
10  
100  
Time t(ms)  
1000 2000  
0.1  
0.5  
1
5
10 14  
0.1  
0.5  
1
5
10 14  
Collector Current IC(A)  
Collector Current IC(A)  
fT IE Characteristics (Typical)  
Safe Operating Area (Single Pulse)  
Pc Ta Derating  
(VCE=12V)  
40  
80  
60  
40  
130  
100  
Typ  
10  
5
50  
1
20  
0
Without Heatsink  
Natural Cooling  
0.5  
Without Heatsink  
3.5  
0
0.2  
–0.02  
–0.1  
–1  
–10  
3
10  
100  
200  
0
25  
50  
75  
100  
125  
150  
Collector-Emitter Voltage VCE(V)  
Emitter Current IE(A)  
Ambient Temperature Ta(˚C)  
65  

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