Datasheet > 2SC3295

2SC3295

更新时间： 2024-11-26 12:53:39

品牌	Logo	应用领域
TYSEMI		高压
页数	文件大小	规格书
1页	55K
描述
High hFE: hFE = 600 3600. High voltage: VCEO = 50 V. High voltage: VCEO = 50 V.

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中文翻译

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数据手册

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2SC3295 数据手册

SMD Type

Transistors

Product specification

2SC3295

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

High h^FE: h^FE= 600 3600.

High voltage: VCEO = 50 V.

High collector current: I^C= 150 mA (max).

Small package.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

150

Base current

I^B

Collector power dissipation

Junction temperature

Storage temperature range

P^C

150

125

T^stg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

0.1

Unit

ìA

Collector cut-off current

Emitter cut-off current

DC current gain

I^CBO

I^EBO

h^FE

V^CB= 50 V, I^E= 0

V^EB= 5 V, I^C= 0

0.1

ìA

V^CE= 6 V, I^C= 2 mA

600

100

3600

Collector-emitter saturation voltage

Transition frequency

V^{CE (sat)}I^C= 100 mA, I^B= 10 mA

0.12 0.25

MHz

f^T

V^CE= 10 V, I^C= 10 mA

250

3.5

0.5

0.3

Collector output capacitance

C^ob

V^CB= 10 V, I^E= 0, f = 1 MHz

NF(1) V^CE= 6 V, I^C= 0.1 mA, f = 100 Hz, Rg = 10kÙ

NF(2) V^CE= 6 V, I^C= 0.1 mA, f = 100 Hz, Rg = 10kÙ

Noise figure

hFE Classification

Marking

hFE

600 1800

1200 3600

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