Datasheet > 2SC3285

2SC3285

更新时间： 2024-11-26 06:26:11

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管开关局域网
页数	文件大小	规格书
3页	91K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

技术参数
数据手册

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2SC3285 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.81

2SC3285 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC3285

DESCRIPTION

·With TO-3PN package

·High speed switching

·Good linearity of h_FE

·High V_CBO

APPLICATIONS

·For high speed switching applications

PINNING(see Fig.2)

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

ABSOLUTE MAXIMUM RATINGS(T_C=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

UNIT

Open emitter

Open base

1000

800

Open collector

I_CP

Collector current-peak

Base current

I_B

T_C=25℃

T_a=25℃

P_C

Collector power dissipation

2.5

Junction temperature

Storage temperature

150

-55~150

℃

T_j

T_stg

12 3

中文翻译

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与2SC3285相关器件

型号	品牌	获取价格	描述	数据表
2SC3286M	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 32V V(BR)CEO \| 24A I(C) \| SOT-289VAR
2SC3286-M	NEC	获取价格	SILICON POWER TRANSISTOR
2SC3292	SANYO	获取价格	For Switching Regulators
2SC3293	SANYO	获取价格	Driver Applications
2SC3293-CB	ONSEMI	获取价格	Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SC3293-RA	ONSEMI	获取价格	Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SC3293-RB	ONSEMI	获取价格	Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SC3293-YA	ONSEMI	获取价格	Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
2SC3294	SANYO	获取价格	Driver Applications
2SC3295	TYSEMI	获取价格	High hFE: hFE = 600 3600. High voltage: VCEO = 50 V. High voltage: VCEO = 50 V.