是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.92 |
Is Samacsys: | N | 最大集电极电流 (IC): | 1.2 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 1000 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 20 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 180 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC3293 | SANYO |
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Driver Applications | |
2SC3293-CB | ONSEMI |
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Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
2SC3293-RA | ONSEMI |
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Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
2SC3293-RB | ONSEMI |
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Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
2SC3293-YA | ONSEMI |
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Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
2SC3294 | SANYO |
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Driver Applications | |
2SC3295 | TYSEMI |
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High hFE: hFE = 600 3600. High voltage: VCEO = 50 V. High voltage: VCEO = 50 V. | |
2SC3295 | TOSHIBA |
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NPN EPITAXIALTYPE (AUDIO FREQUENC AMPLIFIER, SWITCHING APPLICATIONS) | |
2SC3295 | KEXIN |
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Silicon NPN Epitaxial | |
2SC3295_03 | TOSHIBA |
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Audio Frequency Amplifier Applications Switching Applications |