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2SC3295

更新时间: 2024-11-26 06:16:43
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科信 - KEXIN /
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描述
Silicon NPN Epitaxial

2SC3295 数据手册

  
SMD Type  
Transistors  
Silicon NPN Epitaxial  
2SC3295  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
3
Features  
High hFE: hFE = 600 3600.  
High voltage: VCEO = 50 V.  
High collector current: IC = 150 mA (max).  
Small package.  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
1.9  
-0.1  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
50  
50  
V
5
150  
V
mA  
mA  
mW  
Base current  
IB  
30  
Collector power dissipation  
Junction temperature  
Storage temperature range  
PC  
150  
Tj  
125  
Tstg  
-55 to +125  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
Typ  
Max  
0.1  
Unit  
ìA  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
ICBO  
IEBO  
hFE  
VCB = 50 V, IE = 0  
VEB = 5 V, IC = 0  
0.1  
ìA  
VCE = 6 V, IC = 2 mA  
600  
100  
3600  
Collector-emitter saturation voltage  
Transition frequency  
VCE (sat) IC = 100 mA, IB = 10 mA  
0.12 0.25  
V
MHz  
pF  
fT  
VCE = 10 V, IC = 10 mA  
250  
3.5  
0.5  
0.3  
Collector output capacitance  
Cob  
VCB = 10 V, IE = 0, f = 1 MHz  
NF(1) VCE = 6 V, IC = 0.1 mA, f = 100 Hz, Rg = 10kÙ  
NF(2) VCE = 6 V, IC = 0.1 mA, f = 100 Hz, Rg = 10kÙ  
dB  
Noise figure  
dB  
hFE Classification  
Marking  
hFE  
PA  
PB  
600 1800  
1200 3600  
1
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