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2SC2996-OTE85L PDF预览

2SC2996-OTE85L

更新时间: 2024-11-18 21:14:11
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
6页 169K
描述
TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal

2SC2996-OTE85L 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.76
最大集电极电流 (IC):0.05 A基于收集器的最大容量:1.3 pF
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):70最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):350 MHzBase Number Matches:1

2SC2996-OTE85L 数据手册

 浏览型号2SC2996-OTE85L的Datasheet PDF文件第2页浏览型号2SC2996-OTE85L的Datasheet PDF文件第3页浏览型号2SC2996-OTE85L的Datasheet PDF文件第4页浏览型号2SC2996-OTE85L的Datasheet PDF文件第5页浏览型号2SC2996-OTE85L的Datasheet PDF文件第6页 

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