生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.83 | 最大集电极电流 (IC): | 0.03 A |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 160 | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.25 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 320 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC3000E | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92 |
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2SC3000F | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92 |
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2SC3001 | MITSUBISHI |
获取价格 |
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) |
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2SC3004 | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | 3A I(C) | TO-126 |
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2SC3006 | TOSHIBA |
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TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS) |
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2SC3007 | ETC |
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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) |
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2SC3011 | TOSHIBA |
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TRANSISTOR (UHF~C BAND LOW NOISE AMPLIFIER APPLICATIONS) |
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2SC3011 | TYSEMI |
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High Gain :|S21e|2=12dB(TYP.) Low Noise Figure: NF=2.3dB(Typ.) f=1GHz |
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2SC3011 | KEXIN |
获取价格 |
Silicon NPN Epitaxial |
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2SC3011TE85L | TOSHIBA |
获取价格 |
TRANSISTOR C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236, BIP RF Small Signal |
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