生命周期: | Obsolete | 零件包装代码: | SOT-23 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.74 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.05 A |
基于收集器的最大容量: | 1.3 pF | 集电极-发射极最大电压: | 30 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 120 |
最高频带: | VERY HIGH FREQUENCY BAND | JEDEC-95代码: | TO-236 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.15 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 350 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC2996-YTE85L | TOSHIBA |
获取价格 |
TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | |
2SC2998 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-92 | |
2SC2998E | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-92 | |
2SC2998F | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-92 | |
2SC2998G | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-92 | |
2SC2999 | SANYO |
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HF Amplifier Applications | |
2SC2999 | LGE |
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双极型晶体管 | |
2SC2999 | CJ |
获取价格 |
TO-92S | |
2SC2999C | ETC |
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TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | SPAK | |
2SC2999D | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | SPAK |