Datasheet > 2SC2999

2SC2999

更新时间： 2024-11-17 22:52:39

品牌	Logo	应用领域
三洋 - SANYO		放大器
页数	文件大小	规格书
5页	192K
描述
HF Amplifier Applications

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中文翻译

获取价格

数据手册

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2SC2999 数据手册

Ordering number:EN931D

NPN Epitaxial Planar Silicon Transistor

2SC2999

HF Amplifier Applications

Features

Package Dimensions

unit:mm

· FBET series.

· Very small-sized package permitting sets to be small-

sized and slim.

2033

[2SC2999]

· High f (f =750MHz typ.) and small C

(C =0.6pF typ).

B : Base

C : Collector

E : Emitter

SANYO : SPA

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Symbol

Conditions

Ratings

Unit

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

EBO

˚C

Collector Dissipation

Junction Temperature

Storage Temperature

150

125

Tstg

–40 to +125

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

0.1

Collector Cutoff Current

=10V, I =0

µA

CBO

Emitter Cutoff Current

DC Current Gain

=3V, I =0

0.1

EBO

=6V, I =1mA

=6V, I =4mA

40*

450

200*

Gain-Bandwidth Product

Reverse Transfer Capacitance

Base-to-Collector Time Constant

Noise Figure

750

0.6

MHz

=6V, f=1MHz

0.9

rbb'C

=6V, I =1mA, f=31.9MHz

=6V, I =1mA, f=100MHz

2.2

Power Gain

=6V, I =1mA, f=100MHz

* : The 2SC2999 are classified as follows according to h at 1mA :

120 100

200

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N3098HA (KT)/3107KI/5124KI, MT No.931–1/5

12 3 4 5

中文翻译

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与2SC2999相关器件

型号	品牌	获取价格	描述	数据表
2SC2999C	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 30MA I(C) \| SPAK
2SC2999D	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 30MA I(C) \| SPAK
2SC2999E	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 30MA I(C) \| SPAK
2SC3000	SANYO	获取价格	HF Amp Applications
2SC3000D	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 30MA I(C) \| TO-92
2SC3000E	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 30MA I(C) \| TO-92
2SC3000F	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 30MA I(C) \| TO-92
2SC3001	MITSUBISHI	获取价格	NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
2SC3004	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 30V V(BR)CEO \| 3A I(C) \| TO-126
2SC3006	TOSHIBA	获取价格	TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)

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