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2SC3011

更新时间: 2024-02-13 09:30:01
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
1页 105K
描述
High Gain :|S21e|2=12dB(TYP.) Low Noise Figure: NF=2.3dB(Typ.) f=1GHz

2SC3011 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:2-3F1A, SC-59, 3 PINReach Compliance Code:unknown
风险等级:5.85其他特性:LOW NOISE
最大集电极电流 (IC):0.03 A基于收集器的最大容量:0.9 pF
集电极-发射极最大电压:7 V配置:SINGLE
最小直流电流增益 (hFE):30最高频带:C BAND
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):6500 MHzBase Number Matches:1

2SC3011 数据手册

  
TransistIoCrs  
Product specification  
2SC3011  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
High Gain :|S21e|2=12dB(TYP.)  
Low Noise Figure: NF=2.3dB(Typ.) f=1GHz  
High fT : fT=6.5GHz  
1
2
+0.1  
0.95  
-0.1  
+0.05  
-0.01  
0.1  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
20  
7
V
3
30  
V
mA  
mA  
mW  
Emitter current  
IE  
10  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
Tj  
125  
Tstg  
-55 to +125  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
Typ Max Unit  
Collector cut-off current  
Emitter cut-off current  
Collector-emitter breakdown voltage  
DC current gain  
ICBO  
VCB = 10 V, IE = 0  
VEB = 1.0 V, IC = 0  
1.0  
1.0  
ìA  
ìA  
V
IEBO  
V(BR)CEO IC = 0.5 mA, IB = 0  
7
hFE  
VCE (sat)  
VBE (sat)  
Cob  
VCE = 5 V, IC = 10 mA  
30  
120  
0.1  
0.87  
0.7  
0.5  
0.8  
6.5  
12  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Collector output capacitance  
Reverse Transfer Capacitance  
Input Capacitance  
V
V
IC = 10 mA, IB = 1mA  
0.9  
pF  
pF  
pF  
GHz  
dB  
dB  
VCB = 5 V, IE = 0, f = 1 MHz  
Cre  
Cib  
VEB=0,IC=0,f=1MHZ  
Transition Frequency  
fT  
VCE=5V,IC=10mA  
|S21e|2  
NF  
Insertion Gain  
VCE=5V,IC=10mA,f=1GHZ  
VCE=5V,IC=5mA,f=1GHz  
Noise Figure  
2.3  
Marking  
Marking  
MA  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 1  
4008-318-123  

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