Datasheet > 2SC2996

2SC2996

更新时间： 2024-11-21 05:56:59

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描述
Silicon NPN Epitaxial

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中文翻译

获取价格

数据手册

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2SC2996 数据手册

SMD Type

TransistIoCrs

Silicon NPN Epitaxial

2SC2996

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

High stability oscillation voltage on FM local oscillator.

Recommend FM/AM RF, MIX, local and IF.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Emitter current

I^E

-50

Collector power dissipation

Junction temperature

Storage temperature range

P^C

150

125

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Collector cut-off current

Emitter cut-off current

DC current gain

Symbol

Testconditons

Min

Typ

Max

0.1

Unit

ìA

ICBO

I^EBO

h^FE

VCB = 40 V, IE = 0

VEB = 4 V, IC = 0

0.5

ìA

VCE = 6V , IC = 1mA

VCB = 6V , f = 1 MHz

VCE = 6V, IC = -1 mA

240

1.3

Reverse transfer capacitance

Transition frequency

Collector-base time constant

Noise figure

C^re

0.9

350

MHz

f^T

150

V^CE= 6 V, IE = -1mA, f = 30 MHz

V^CE= 6 V, IE = -1mA, f = 100 MHz

VCE = 6 V,f = 100 MHz

Cc rbb’

4.0

Power gain

Gpe

V^OSC

Oscillation output voltage

150

hFE Classification

Marking

hFE

40 80

70 140

120 240

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