Datasheet > 2SC2712_07

2SC2712_07

更新时间： 2024-11-18 07:30:35

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		晶体晶体管
页数	文件大小	规格书
4页	163K
描述
Silicon Epitaxial Planar Transistor

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中文翻译

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数据手册

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2SC2712_07 数据手册

BL Galaxy Electrical

Production specification

Silicon Epitaxial Planar Transistor

2SC2712

FEATURES

Lead-free

Low noise：NF=1dB (Typ.),10 dB(Max).

Complementary to 2SA1162.

High voltage and high current.

High h_FElinearity.

APPLICATIONS

Audio frequency general purpose amplifier applications.

SOT-23

ORDERING INFORMATION

Type No.

2SC2712

Marking

Package Code

SOT-23

LO▪/LY▪/LG▪/LL▪

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

V_CBO

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Dissipation

150

-55~125

℃

P_C

Junction and Storage Temperature

T_j,T_stg

Document number: BL/SSSTC021

Rev.A

www.galaxycn.com

12 3 4

中文翻译

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