Datasheet > 2SC2712

2SC2712

更新时间： 2024-11-18 07:30:35

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管光电二极管放大器
页数	文件大小	规格书
3页	712K
描述
TRANSISTOR(NPN)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC2712 数据手册

2SC2712

SOT-23

TRANSISTOR (NPN)

1. BASE

FEATURE

· Low Noise: NF=1 dB (Typ),10dB(MAX)

· Complementary to 2SA1162

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

150

-55-150

℃

P_C

T_J

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

TYP

MAX

UNIT

I_C= 100μA, I_E=0

I_C=1mA , I_B=0

I_E= 100μA, I_C=0

V_CB= 60 V, I_E=0

0.1

μA

I_EBO

V_EB=5V, I_C=0

DC current gain

h_FE

V_CE=6V, I_C=2mA

I_C= 100mA, I_B=10mA

V_CE=10V, I_C= 1mA

V_CB=10V, I_E=0,f=1 MHz

700

0.25

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

0.1

MHz

Output capacitance

C_ob

2.0

1.0

3.5

V_CE=6V,I_C=0.1mA,f=1kHz,

Noise Figure

Rg=10kΩ

CLASSIFICATION OF h_FE

Rank

70-140

120-240

Range

Marking

200-400

350-700

JinYu

semiconductor

www.htsemi.com

12 3

中文翻译

下载PDF

与2SC2712相关器件

型号	品牌	获取价格	描述	数据表
2SC2712_07	TOSHIBA	获取价格	Silicon NPN Epitaxial Type (PCT process)
2SC2712_07	BL Galaxy Electrical	获取价格	Silicon Epitaxial Planar Transistor
2SC2712_09	UTC	获取价格	AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR
2SC2712_11	SECOS	获取价格	NPN Epitaxial Planar Transistor
2SC2712_15	KEXIN	获取价格	NPN Transistors
2SC2712BL	WEITRON	获取价格	Silicon NPN Transistors
2SC2712-BL	MCC	获取价格	NPN Plastic-Encapsulate Transistors
2SC2712-BL(F)	TOSHIBA	获取价格	150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC2712-BL(T5L,T)	TOSHIBA	获取价格	TRANSISTOR,BJT,NPN,50V V(BR)CEO,150MA I(C),SOT-23
2SC2712-BL(T5LCLAF	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon