Datasheet > 2SC2712

2SC2712

更新时间： 2024-11-18 06:17:23

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管光电二极管放大器
页数	文件大小	规格书
3页	169K
描述
Silicon NPN Epitaxial Type Transistor

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中文翻译

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数据手册

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2SC2712 数据手册

SMD Type

Transistors

Silicon NPN Epitaxial Type Transistor

2SC2712

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

High voltage and high current: VCEO = 50 V, IC = 150 mA (max)

Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.)

High hFE: hFE = 70 700

+0.1

0.95

-0.1

Low noise: NF = 1dB (typ.), 10dB (max)

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

Collector current

150

Base current

Collector power dissipation

Junction temperature

Storage temperature range

150

125

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Symbol

ICBO

Testconditons

Min

Typ

Max

0.1

Unit

Collector cut-off current

Emitter cut-off current

VCB = 60 V, IE = 0

VEB = 5 V, IC = 0

IEBO

0.1

DC current gain

hFE

VCE = 6 V, IC = 2 mA

700

0.25

3.5

Collector-emitter saturation voltage

Collector output capacitance

VCE (sat) IC = 100 mA, IB = 10 mA

0.1

Cob

VCB = 10V, IE = 0, f = 1 MHz

VCE = 6 V, IC = 0.1 mA , f = 1 KHz,

RG=10KÙ

Noise figure

Transition frequency

VCE = 10V, IC =1 mA

MHz

hFE Classification

Marking

Rank

hFE

70 140

120 240

200 400

350 700

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中文翻译

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