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2SC2230A-Y PDF预览

2SC2230A-Y

更新时间: 2024-11-17 13:04:15
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体小信号双极晶体管放大器PC
页数 文件大小 规格书
5页 133K
描述
TRANSISTOR 100 mA, 180 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, ROHS COMPLIANT, 2-5J1A, TO-92MOD, 3 PIN, BIP General Purpose Small Signal

2SC2230A-Y 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Lifetime Buy零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.47
Is Samacsys:N最大集电极电流 (IC):0.1 A
基于收集器的最大容量:7 pF集电极-发射极最大电压:180 V
配置:SINGLE最小直流电流增益 (hFE):120
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.8 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
VCEsat-Max:0.5 VBase Number Matches:1

2SC2230A-Y 数据手册

 浏览型号2SC2230A-Y的Datasheet PDF文件第2页浏览型号2SC2230A-Y的Datasheet PDF文件第3页浏览型号2SC2230A-Y的Datasheet PDF文件第4页浏览型号2SC2230A-Y的Datasheet PDF文件第5页 
2SC2230,2SC2230A  
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)  
2SC2230,2SC2230A  
High-Voltage General Amplifier Applications  
Unit: mm  
Color TV Class-B Sound Output Applications  
High breakdown voltage: V  
= 180 V (2SC2230A)  
CEO  
High DC current gain  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
200  
160  
2SC2230  
Collector-emitter  
voltage  
V
2SC2230A  
180  
Emitter-base voltage  
Collector current  
Base current  
5
V
I
100  
mA  
mA  
mW  
°C  
C
I
50  
B
Collector power dissipation  
Junction temperature  
P
800  
C
JEDEC  
JEITA  
TO-92MOD  
T
j
150  
Storage temperature range  
T
stg  
55 to 150  
°C  
TOSHIBA  
2-5J1A  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
Weight: 0.36 g (typ.)  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2006-11-09  

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