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2SC2235 PDF预览

2SC2235

更新时间: 2024-09-25 05:56:11
品牌 Logo 应用领域
SECOS 晶体晶体管
页数 文件大小 规格书
2页 177K
描述
NPN Silicon General Purpose Transistor

2SC2235 数据手册

 浏览型号2SC2235的Datasheet PDF文件第2页 
2SC2235  
NPN Silicon  
Elektronische Bauelemente  
General Purpose Transistor  
RoHS Compliant Product  
A suffix of "-C" specifies halogen & lead-free  
TO-92 MOD  
FEATURES  
6.0±0.2  
4.9 0.2  
Complementary to 2SA965  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
1.0±0.1  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Value  
120  
Units  
V
120  
V
5
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
0.8  
A
PC  
0.9  
W
+0.1  
–0.1  
0.45  
+0.1  
–0.1  
TJ  
150  
0.50  
Tstg  
Storage Temperature  
-55to+150  
(1.50 Typ.)  
1: Emitter  
2: Collector  
3: Base  
+0.1  
1.9  
–0.1  
1
2 3  
3.0 0.1  
Unit: mm  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
MIN  
120  
120  
5
TYP  
MAX  
UNIT  
Test  
conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-Base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
V(BR)CBO IC=1mA,IE=0  
V(BR)CEO IC=10mA,IB=0  
V
V
V(BR)EBO  
ICBO  
IE=1mA,IC=0  
V
VCB=120V,IE=0  
VEB=5V,IC=0  
0.1  
0.1  
μA  
μA  
IEBO  
DC current gain  
hFE  
VCE=5V,IC=100mA  
80  
240  
1.0  
1.0  
Collector-emitter saturation voltage  
Base-emitter voltage  
V
CE(sat) IC=500mA,IB=50mA  
V
V
VBE  
fT  
IC=500mA, VCE=5V  
VCE=5V, IC=100mA  
Transition frequency  
120  
MHz  
VCE=10V, IE=0  
f=1MHz  
Collector output capacitance  
Cob  
30  
pF  
CLASSIFICATION OF hFE  
Rank  
O
Y
80-160  
120-240  
Range  
http://www.SeCoSGmbH.com/  
Any changing of specification will not be informed individual  
17-May-2007 Rev. A  
Page 1 of 2  

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