Datasheet > 2SC2235

2SC2235

更新时间： 2024-11-18 14:50:35

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	634K
描述
双极型晶体管

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中文翻译

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技术参数
数据手册

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2SC2235 技术参数

极性：	NPN	Collector-emitter breakdown voltage：	120
Collector Current - Continuous：	0.8	DC current gain - Min：	80
DC current gain - Max：	240	Transition frequency：	120
Package：	TO-92L	Storage Temperature Range：	-55-150
class：	Transistors

2SC2235 数据手册

2SC2235

TO-92MOD Transistor (NPN)

TO-92MOD

5.800

1. EMITTER

6.200

2. COLLECTER

3. BASE

8.400

8.800

Features

0.900

1.100

0.400

0.600

Complementary to 2SA965

13.800

14.200

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

120

Units

1.500 TYP

2.900

3.100

0.000

0.380

1.600

120

0.400

0.500

4.700

5.100

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

0.8

1.730

2.030

P_C

0.9

℃

4.000

T_J

150

Dimensions in inches and (millimeters)

T_stg

Storage Temperature

-55to+150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

MIN

120

TYP

MAX

UNIT

Test

conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

Emitter cut-off current

V_(BR)CBOI_C=1mA,I_E=0

V_(BR)CEOI_C=10mA,I_B=0

V_(BR)EBO

I_CBO

I_E=1mA,I_C=0

V_CB=120V,I_E=0

V_EB=5V,I_C=0

0.1

240

1.0

μA

I_EBO

DC current gain

h_FE

V_CE=5V,I_C=100mA

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat) I_C=500mA,I_B=50mA

V_BE

f_T

I_C=500mA, V_CE=5V

V_CE=5V, I_C=100mA

Transition frequency

120

MHz

V_CE=10V, I_E=0

f=1MHz

Collector output capacitance

Cob

CLASSIFICATION OF h_FE

Rank

80-160

120-240

Range

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

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