Datasheet > 2SC2233

2SC2233

更新时间： 2024-11-17 05:56:03

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	224K
描述
isc Silicon NPN Power Transistor

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数据手册

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2SC2233 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC2233

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

:V_CEO= 60V(Min)

·DC Current Gain-

: h_FE= 30(Min)@ (V_CE= 5V, I_C= 1A)

·High Collector Current

·High Collector Power Dissipation

APPLICATIONS

·TV Horizontal Deflection Output Application

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

200

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

I_CM

I_B

Collector Power Dissipation

@ T_a=25℃

1.5

P_C

Collector Power Dissipation

@ T_C=25℃

T_J

Junction Temperature

150

-55~150

℃

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

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