Datasheet > 2SB966_15

2SB966_15

更新时间： 2022-02-26 12:51:37

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	158K
描述
Silicon PNP Power Transistors

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中文翻译

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数据手册

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2SB966_15 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB966

DESCRIPTION

·With TO-3PFa package

·Complement to type 2SD1289

APPLICATIONS

·For use in low frequency and

power amplifier applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-120

-5

UNIT

Open base

Open collector

-8

I_CM

Collector current-peak

Collector power dissipation

Junction temperature

Storage temperature

-12

P_C

T_C=25℃

℃

T_j

150

T_stg

-55~150

12 3

中文翻译

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2SB967PZ	PANASONIC	获取价格	Power Bipolar Transistor, 5A I(C), 18V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB967Q	PANASONIC	获取价格	Power Bipolar Transistor, 5A I(C), 18V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2
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