Datasheet > 2SB968-Q

2SB968-Q

更新时间： 2024-11-19 01:08:39

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1154K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB968-Q 数据手册

SMD Type

Transistors

PNP Transistors

2SB968

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

■ Features

2.30

+0.8

-0.7

+0.2

5.30

-0.2

0.50

● High collector to emitter VCEO

● Large collector power dissipation P

● Complementary to 2SD1295

0.127

max

+0.1

-0.1

0.80

0.1

0.60⁺_-

1 Base

2.3

+0.15

-0.15

4.60

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

-50

-40

-5

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector current -Pulse

-1.5

-3

Collector Power Dissipation

Junction Temperature

℃

150

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Collector-emitter cut-off current

Emitter cut-off current

CBO

CEO

EBO

-50

-40

-5

Ic= -1mA， I

Ic= -2 mA， I

= -1 mA， IC

E=0

B=0

ICBO

ICEO

EBO

CB= -50V , I

= 0

=-150mA

=-200mA

CE= -5V, I = -1 A

CB = –20V, I = 0, f = 1MHz

^CE= -5V, I = -500mA,f=200MHz

-1

-100

-10

-1

CE = –30V, I

EB= -5V , I

=-1.5 A, I

=-2 A, I

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

-1.5

220

Collector output capacitance

Transition frequency

150

MHz

■ Classification of hfe

Type

2SB968-P

50-100

2SB968-Q

80-160

2SB968-R

120-220

Range

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