Datasheet > 2SB967-R

2SB967-R

更新时间： 2024-11-21 01:08:07

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科信 - KEXIN		/
页数	文件大小	规格书
2页	991K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB967-R 数据手册

SMD Type

Transistors

PNP Transistors

2SB967

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

+0.2

5.30

-0.2

■ Features

0.50

● Large collector current Ic

● Low collector to emitter saturation voltage V^CE(sat).

0.127

max

+0.1

-0.1

0.80

0.1

0.60⁺_-

1 Base

2.3

4.60

+0.15

-0.15

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-27

-18

-7

Collector Current - Continuous

Collector current -Pulse

-5

-8

Collector Power Dissipation

Junction Temperature

150

℃

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-27

-18

-7

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -1 mA， I =0

= -100μA， I =0

^CB= -20V , I =0

EB= -5V , I =0

E=0

CBO

EBO

-0.1

-1

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-3 A, I

=-100mA

-1

=-3 A, I

-1.2

625

hFE

^CE= -2V, I

CB = –20V, I

CE= -6V, I = 50mA,f=200MHz

C= -2 A

Collector output capacitance

Transition frequency

= 0, f = 1MHz

120

MHz

■ Classification of hfe

Type

2SB967-P

90-135

2SB967-Q

125-205

2SB967-R

180-625

Range

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